Electrical Characterization of Solar-Blind Deep-Ultraviolet (Al 0.28 Ga 0.72 ) 2 O 3 Schottky Photodetectors Grown on Silicon by Pulsed Laser Deposition

This study reports on (Al 0.28 Ga 0.72 ) 2 O 3 -based ultraviolet-C Schottky metal-semiconductor-metal and metal-insulator-metal photodetectors with peak responsivities of 1.17 and 0.40 A/W, respectively, for an incident-light wavelength of 230 nm at 2.50 V reverse-bias. © 2019 The Author (s)