Photothermal deflection studies of GaAs epitaxial layers | Zendy

Nibu A. George | Zendy; C. P. G. Vallabhan | Zendy; V. P. N. Nampoori | Zendy; P. Radhakrishnan | Zendy

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Photothermal deflection studies of GaAs epitaxial layers

Author(s) -

Nibu A. George,

C. P. G. Vallabhan,

V. P. N. Nampoori,

P. Radhakrishnan

Publication year - 2002

Publication title -

applied optics

Language(s) - English

Resource type - Journals

ISSN - 0003-6935

DOI - 10.1364/ao.41.005179

Subject(s) - materials science , photothermal therapy , epitaxy , deflection (physics) , thermal diffusivity , optics , photothermal spectroscopy , optoelectronics , impurity , molecular beam epitaxy , gallium arsenide , thin film , thermal , layer (electronics) , nanotechnology , chemistry , physics , organic chemistry , quantum mechanics , meteorology

Photothermal beam deflection studies were carried out with GaAs epitaxial double layers grown on semi-insulating GaAs substrates. The impurity densities in thin epitaxial layers were found to influence the effective thermal diffusivity of the entire structure.

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