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Low-frequency intensity noise in semiconductor lasers
Author(s) -
Meg M. Hall,
J. L. Carlsten
Publication year - 1996
Publication title -
applied optics
Language(s) - English
Resource type - Journals
ISSN - 0003-6935
DOI - 10.1364/ao.35.006438
Subject(s) - relative intensity noise , optics , semiconductor laser theory , laser , noise (video) , noise generator , longitudinal mode , shot noise , materials science , diode , intensity (physics) , physics , quantum noise , noise spectral density , optoelectronics , noise figure , detector , amplifier , cmos , quantum mechanics , artificial intelligence , computer science , image (mathematics) , quantum
The low-frequency intensity noise at 25 MHz of a Fabry-Perot semiconductor laser is measured as a function of injection current. All the measurements are taken at room temperature and the laser is operated with a commercial current source (the conditions under which laser diodes are often used). At the highest injection current of twice threshold, the intensity noise is 5.5 dB above the shot-noise limit. When the longitudinal side mode suppression of the laser is 20 dB or larger, the intensity noise is modeled adequately by an expression derived from the single-mode, small-signal, linearized, semiclassical rate equations. All the parameters used in the theory are derived or referenced.

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