Open AccessMesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs
Author(s) -
Chao Shen,
Tien Khee Ng,
Chun Hong Kang,
Boon S. Ooi
Publication year - 2013
Publication title -
asia communications and photonics conference 2021
Language(s) - English
Resource type - Conference proceedings
DOI - 10.1364/acpc.2013.aw3k.3
Subject(s) - light emitting diode , optoelectronics , materials science , mesa , quantum efficiency , led lamp , physics , optics , computer science , programming language
The mechanisms of mesa-height dependent efficiency and efficiency droop of blue InGaN/GaN micro-LED is presented. Device with a large etch-depth (> 1.3 µm) shows significant strain relief with aggravated current crowding
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