Open AccessEffects of Transition Energy on Intra-Band Photoluminescence of Zinc Oxide (ZnO) Semiconductor under Low injection Level
Author(s) -
Getu Endale
Publication year - 2019
Publication title -
universal journal of materials science
Language(s) - English
Resource type - Journals
eISSN - 2331-6691
pISSN - 2331-6705
DOI - 10.13189/ujms.2019.070301
Subject(s) - photoluminescence , zinc , materials science , semiconductor , optoelectronics , oxide , wide bandgap semiconductor , metallurgy
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