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Nonvolatile Memory Cell Based on Memristor
Author(s) -
Santosh Parajuli,
Ram Kaji Budhathoki,
Hyongsuk Kim
Publication year - 2020
Publication title -
universal journal of electrical and electronic engineering
Language(s) - English
Resource type - Journals
eISSN - 2332-3299
pISSN - 2332-3280
DOI - 10.13189/ujeee.2020.070206
Subject(s) - memristor , non volatile memory , nanotechnology , computer science , materials science , environmental science , optoelectronics , engineering , electrical engineering
Memristor, one of the fundamental circuit elements, has promising applications in non-volatile memory and storage technology as it can theoretically achieve infinite states. Information can be stored independently in these states and retrieved whenever required. In this paper, we have proposed a non volatile memory cell based on memristor emulator. The circuit is able to perform read and write operations. In this memristor based memroy cell, unipolar pulse is used for writing and bipolar pulse is used for reading. Unlike other earlier designs, the circuit does not need external read/write enable switches to switch between read and write operations; the switching is achieved by the zero average bipolar read pulse given after the completion of write cycle. In our proposed memristor based memory cell, single bit can be read and any voltages from 0 to 5 volts can be written. Mathematical analysis and the simulation results of memristor emulator based read write circuit have been presented to confirm its operation.

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