Open AccessThe Study of the Electrical Properties of Schottky Diodes Based on Silicon with Amorphous and Polycrystalline Material
Author(s) -
И. Г. Пашаев
Publication year - 2013
Publication title -
universal journal of electrical and electronic engineering
Language(s) - English
Resource type - Journals
eISSN - 2332-3299
pISSN - 2332-3280
DOI - 10.13189/ujeee.2013.010403
Subject(s) - materials science , schottky diode , amorphous solid , amorphous silicon , silicon , polycrystalline silicon , diode , optoelectronics , engineering physics , nanotechnology , crystalline silicon , crystallography , chemistry , engineering , thin film transistor , layer (electronics)
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