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In this paper, the Photoluminescence intensity of Zinc oxide compound semiconductor in conduction band to valence band, ICV , conduction band to localized trap centre, ICT and localized trap centre to valence band, IT V radiative recombination mechanisms are discussed in different temperatures. By varying temperature, the dominated radiative recombination mechanisms are studied from the three radiative recombination mechanisms. At high values of temperature, the intensity of light in band-to-band radiative recombination mechanism dominates for all values of energies. For high values of impurity trap density, only the intensity of light in conduction band to trap level radiative recombination mechanisms dominates for all energies.

Effects of Temperature on Intra-Band Photoluminescence of Zinc Oxide (ZnO) Semiconductor