Open AccessQuantum Effects Investigation in 20 nm Gate Underlap SOI MOSFET for Millimeter Wave Applications
Author(s) -
Indra Vijay Singh,
M. S. Alam
Publication year - 2015
Publication title -
nanoscience and nanoengineering
Language(s) - English
Resource type - Journals
eISSN - 2331-9747
pISSN - 2331-9755
DOI - 10.13189/nn.2015.030202
Subject(s) - silicon on insulator , mosfet , extremely high frequency , optoelectronics , physics , materials science , optics , transistor , silicon , voltage , quantum mechanics
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