Diffusion in Semiconductors by Using Fourier Series Expansion Technique | Zendy

M.K. El-Adawi | Zendy; S. Abdelghany | Zendy; Samah M. Shalaby | Zendy

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Diffusion in Semiconductors by Using Fourier Series Expansion Technique

Author(s) -

M.K. El-Adawi,

S. Abdelghany,

Samah M. Shalaby

Publication year - 2014

Publication title -

material science research india

Language(s) - English

Resource type - Journals

eISSN - 2394-0565

pISSN - 0973-3469

DOI - 10.13005/msri/110201

Subject(s) - fourier series , doping , fourier transform , diffusion , silicon , materials science , semiconductor , diffusion equation , indium , condensed matter physics , mathematical analysis , physics , mathematics , thermodynamics , optoelectronics , engineering , metric (unit) , operations management

Doping by diffusion is still one of acceptable and important methods that have essential technological applications. A theoretical approach to study diffusion in semi-conductors is introduced. The diffusion equation together with Fick’s law and mass balance equation are solved to obtain the concentration function and the mass penetration depth using Fourier Series expansion technique. Doping of indium, phosphorus, gallium and Arsenic in Silicon as illustrative examples are given.

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