Study of electrical optical and structural properties of lead selenide sulphide ternary thin films

Polycrystalline Lead Selenide Sulphide thin films have been deposited on glass substrate at 300 K by thermal evaporation technique. The different sets of samples of varying composition ‘x’ from 0.1 to 0.9 were deposited and annealed at reduced pressure of 0.1 micron for duration of 4 hours at temp (373) K. The material parameters determined are bulk resistivity 1.450 (Ohm-cm), mean free path 2820 Å and carrier concentration 5.5 x 1012 per cm3. The estimated activation energy for heating cycles is larger as compare to cooling cycles. Fermi-energy determine from TEP study are within ranges between band gap energy and activation energy values. Also the XRD study reveals that all the samples were polycrystalline having cubic FCC, cubic and tetragonal structure. The dependence of absorption coefficient ‘’ on photon energy has been determined. The analysis of result so that for Lead Selenide Sulphide films of different composition, direct transition occurs with band gap energy in the range of 1.0 eV to 1.4 eV. Refractive indices and extinction coefficient have been evaluated and are in the range 1.20 to 4.80 and 0.005 to 0.0245 respectively. The compositions of films were analyzed using Energy Dispersive X-ray Analysis (EDAX). Also the grain size is determined from X-ray diffraction study. Most of the grain sizes are below 300 Å indicates that the film material exhibits nano structure. The SEM analysis indicates that the film is covered with large number of star shaped microgranuals. The size of the microgranuals increases with increasing ‘x’.