Structural parameters of (CdSe)1-x(ZnS)x mixed semiconductors

Binary, ternary and quaternary semiconductors like CdSe, CdS, Cd1-xZnxSe, Cd1-x ZnxS, CdSe1-xTex, In1-xGaxSd1-yAsy were prepared in thin film form by several authors1-6 using different techniques to help in miniaturization of electronic devices made out of these compounds. The techniques used were Successive ionic layer absorption and reaction process.7 Spray pyrolisis8,9, Molecular beam epitaxy,10 Radiofrequency sputtering11 and Thermal vacuum evaporation12. Recently the authors13 have prepared bulk , Cd1xZnxS:Cu polycrystalline materials by coprecipitation method and characterized them using XRD, SEM, EDAX, electrical conductivity, optical absorption. The results are comparable very much with those of bulk material prepared by sophisticated techniques like melting and vapor transport methods. This technique gave reproducible results. An attempt is also therefore made to prepare alloys or solid solutions of CdSe and ZnS by coprecipitation method. The X-ray results indicated Material Science Research India Vol. 6(2), 263-278 (2009)