Effect of Aluminum Mole Fraction on the Hamiltonian of Gan/Algan Quantum Dot Laser Diode | Zendy

Ujwala Zope | Zendy; Gauri Kasar | Zendy; Edmund Samuel | Zendy; D. S. Patil | Zendy

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Effect of Aluminum Mole Fraction on the Hamiltonian of Gan/Algan Quantum Dot Laser Diode

Author(s) -

Ujwala Zope,

Gauri Kasar,

Edmund Samuel,

D. S. Patil

Publication year - 2008

Publication title -

material science research india

Language(s) - English

Resource type - Journals

eISSN - 2394-0565

pISSN - 0973-3469

DOI - 10.13005/msri/050128

Subject(s) - mole fraction , quantum dot , materials science , optoelectronics , hamiltonian (control theory) , diode , aluminium , laser , optics , physics , composite material , mathematics , thermodynamics , mathematical optimization

Analysis of the electron and hole transport in the quantum dot laser diode has been carried out in this paper. The electron and hole quantum dot potential has been deduced using the transfer matrix method and an iterative method have been utilize for computation of Eigen energy. The Hamiltonian is very useful to approximate the extent of the wave function within the quantum dot. The over all Hamiltonian for the quantum dot has been obtained and the normalized Eigen frequency has been deduced in the paper which is very essential for the analysis of the radiated spectra within the quantum dot region.

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