Electrical Characterization of P-Type 4h- Silicon Carbide Metal Contacts

Silicon Carbide (SiC) is very important subject for the industrial applications. It has wide band gap structure, so it can be used for high power or high frequency applications. This work concentrates in using gold (Au) and chromium (Cr) as metal contact on single crystal silicon carbide( 4H-SiC ) . This type of SiC showed low mobility anisotropy , but high electron mobility. Thermal evaporation has been used to deposit gold or chromium metals with purity of 99.99% on top of the SiC wafer to form a contact area . The contact area had diameter ranging from 1 to 2 mm. The electrical measurements of the junction were obtained, and used to characterize the current -voltage behavior as well as capacitance-voltage. These measurements were enabling us to study the barrier height doping concentration, as well as the deep levels of the device near the surface.