Open AccessTHE CONCEPT OF “SURFACE-TRAPPED HOLE” IN n-TYPE SEMICONDUCTORS AND THE CONDITIONS FOR EFFICIENT AND STABLE PHOTOELECTROCHEMICAL CELLS
Author(s) -
NakatoYoshihiro,
TsumuraAkira,
TsubomuraHiroshi
Publication year - 1981
Publication title -
chemistry letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.492
H-Index - 114
eISSN - 1348-0715
pISSN - 0366-7022
DOI - 10.1246/cl.1981.383
Subject(s) - chemistry , redox , semiconductor , photoelectrochemical cell , electron transfer , photoelectrochemistry , electrode , chemical physics , decomposition , surface (topology) , electrochemistry , surface states , electron , electron hole , photochemistry , optoelectronics , inorganic chemistry , quantum mechanics , electrolyte , physics , geometry , mathematics , organic chemistry