Open AccessA Base-Collector Architecture for SiGe HBTs using Low-Temperature CVD Epitaxy Combined with Chemical-Mechanical Polishing
Author(s) -
Erdal Suvar,
Erik Haralson,
Markus Forsberg,
Henry H. Radamson,
Yongbin Wang,
Jan Grahn
Publication year - 2002
Publication title -
physica scripta
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.415
H-Index - 83
eISSN - 1402-4896
pISSN - 0031-8949
DOI - 10.1238/physica.topical.101a00064
Subject(s) - materials science , chemical mechanical planarization , epitaxy , chemical vapor deposition , heterojunction , optoelectronics , heterojunction bipolar transistor , common emitter , fabrication , dopant , bipolar junction transistor , torr , layer (electronics) , stack (abstract data type) , silicon , doping , transistor , nanotechnology , electrical engineering , medicine , alternative medicine , engineering , physics , voltage , pathology , computer science , thermodynamics , programming language