Open AccessGrowth of High Frequency SiGe Heterojunction Bipolar Transistors Structures
Author(s) -
H. H. Radamson,
B. Mohadjeri,
C. Me,
A. Bentzen,
Jan Grahn,
G. Landgren
Publication year - 2002
Publication title -
physica scripta
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.415
H-Index - 83
eISSN - 1402-4896
pISSN - 0031-8949
DOI - 10.1238/physica.topical.101a00045
Subject(s) - materials science , bipolar junction transistor , heterojunction , optoelectronics , dopant , heterojunction bipolar transistor , arsenic , chemical vapor deposition , high resolution , secondary ion mass spectrometry , transistor , analytical chemistry (journal) , ion , doping , chemistry , voltage , electrical engineering , remote sensing , organic chemistry , chromatography , geology , metallurgy , engineering