
Influence of Interface Roughness on Electrical Properties of pMOSFETs with a Si/Si1- xGex Channel
Author(s) -
A.-C. Lindgren,
Per-Erik Hellberg,
B. Mohadjeri,
S.-L. Zhang,
Mikael stling
Publication year - 2002
Publication title -
physica scripta
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.415
H-Index - 83
eISSN - 1402-4896
pISSN - 0031-8949
DOI - 10.1238/physica.topical.101a00022
Subject(s) - transconductance , materials science , subthreshold slope , epitaxy , surface roughness , optoelectronics , mosfet , surface finish , layer (electronics) , nanotechnology , transistor , composite material , electrical engineering , voltage , engineering