Open AccessThin Oxide Breakdown Mechanism of Constant Voltage Stress on MOSFETs
Author(s) -
J. H. Chen,
Chia-Yu Wei,
Shyh-Chyi Wong,
Y. H. Wang
Publication year - 2002
Publication title -
physica scripta
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.415
H-Index - 83
eISSN - 1402-4896
pISSN - 0031-8949
DOI - 10.1238/physica.topical.101a00010
Subject(s) - materials science , stress (linguistics) , time constant , voltage , constant (computer programming) , charge (physics) , constant voltage , breakdown voltage , oxide , transient (computer programming) , degradation (telecommunications) , mechanism (biology) , condensed matter physics , electrical engineering , physics , philosophy , linguistics , quantum mechanics , computer science , metallurgy , programming language , engineering , operating system