Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window | Zendy

Yi Wen | Zendy; Xiaojie Xu | Zendy; Mengling Tao | Zendy; Xiaofei Lu | Zendy; Xiaochuan Deng | Zendy; Xuan Li | Zendy; Juntao Li | Zendy; Zhiqiang Li | Zendy; Bo Zhang | Zendy

Open Access

Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window

Author(s) -

Yi Wen,

Xiaojie Xu,

Mengling Tao,

Xiaofei Lu,

Xiaochuan Deng,

Xuan Li,

Juntao Li,

Zhiqiang Li,

Bo Zhang

Publication year - 2020

Publication title -

nanoscale research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.87

H-Index - 107

eISSN - 1931-7573

pISSN - 1556-276X

DOI - 10.1186/s11671-020-03443-5

Subject(s) - materials science , optoelectronics , fabrication , rectifier (neural networks) , process window , voltage , figure of merit , breakdown voltage , electrical engineering , engineering physics , computer science , lithography , medicine , stochastic neural network , alternative medicine , pathology , machine learning , recurrent neural network , artificial neural network , engineering

A 13.5 kV 4H-SiC PiN rectifier with a considerable active area of 0.1 cm 2 is fabricated in this paper. Charge-field-modulated junction termination extension (CFM-JTE) has been proposed for satisfying the requirement of ultra-high reverse voltage, which enlarges the JTE dose tolerance window, making it approximately 2.8 times that of the conventional two-zone JTE. Besides, the CFM-JTE can be implemented through the conventional two-zone JTE process. The measured forward current is up to 100 A @ V F = 5.2 V in the absence of carrier lifetime enhancement technology. The CFM-JTE structure accomplishes 96% of the theoretical breakdown voltage of the parallel plane junction with a relatively small terminal area of 400 μm, which contributes to achieving the Baliga’s figure of merit of 58.8 GW/cm 2 .

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