Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdO x Membrane in Electrolyte-Insulator-Semiconductor Structure | Zendy

Pankaj Kumar | Zendy; S. Maikap | Zendy; JianTai Qiu | Zendy; Surajit Jana | Zendy; Anisha Roy | Zendy; Kanishk Singh | Zendy; Hsin-Ming Cheng | Zendy; Mu-Tung Chang | Zendy; Rajat Mahapatra | Zendy; HsienChin Chiu | Zendy; JerRen Yang | Zendy

Open Access

Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdO x Membrane in Electrolyte-Insulator-Semiconductor Structure

Author(s) -

Pankaj Kumar,

S. Maikap,

JianTai Qiu,

Surajit Jana,

Anisha Roy,

Kanishk Singh,

Hsin-Ming Cheng,

Mu-Tung Chang,

Rajat Mahapatra,

HsienChin Chiu,

JerRen Yang

Publication year - 2016

Publication title -

nanoscale research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.87

H-Index - 107

eISSN - 1931-7573

pISSN - 1556-276X

DOI - 10.1186/s11671-016-1657-5

Subject(s) - materials science , membrane , crystallite , analytical chemistry (journal) , transmission electron microscopy , x ray photoelectron spectroscopy , detection limit , semiconductor , hydrogen peroxide , electrolyte , nanochemistry , chemical engineering , chemistry , nanotechnology , electrode , optoelectronics , chromatography , organic chemistry , biochemistry , engineering , metallurgy

A 15-nm-thick GdO x membrane in an electrolyte-insulator-semiconductor (EIS) structure shows a higher pH sensitivity of 54.2 mV/pH and enzyme-free hydrogen peroxide (H 2 O 2 ) detection than those of the bare SiO 2 and 3-nm-thick GdO x membranes for the first time. Polycrystalline grain and higher Gd content of the thicker GdO x films are confirmed by transmission electron microscopy (TEM) and X-ray photo-electron spectroscopy (XPS), respectively. In a thicker GdO x membrane, polycrystalline grain has lower energy gap and Gd 2+ oxidation states lead to change Gd 3+ states in the presence of H 2 O 2 , which are confirmed by electron energy loss spectroscopy (EELS). The oxidation/reduction (redox) properties of thicker GdO x membrane with higher Gd content are responsible for detecting H 2 O 2 whereas both bare SiO 2 and thinner GdO x membranes do not show sensing. A low detection limit of 1 μM is obtained due to strong catalytic activity of Gd. The reference voltage shift increases with increase of the H 2 O 2 concentration from 1 to 200 μM owing to more generation of Gd 3+ ions, and the H 2 O 2 sensing mechanism has been explained as well.

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