Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates | Zendy

Hla Myo Tun | Zendy

Open Access

Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates

Author(s) -

Hla Myo Tun

Publication year - 2015

Publication title -

science research

Language(s) - English

Resource type - Journals

eISSN - 2329-0935

pISSN - 2329-0927

DOI - 10.11648/j.sr.20150306.16

Subject(s) - sapphire , chemical vapor deposition , mist , materials science , photoluminescence , volumetric flow rate , deposition (geology) , analytical chemistry (journal) , crystal (programming language) , substrate (aquarium) , nitrogen , thin film , mineralogy , chemistry , optoelectronics , nanotechnology , optics , environmental chemistry , paleontology , laser , physics , oceanography , organic chemistry , quantum mechanics , sediment , meteorology , computer science , biology , programming language , geology

ZnO thin films were deposited on sapphire substrate by mist chemical vapor deposition (mist-CVD) with different flow rate of carrier gas. This is a simple and low cost method for large-area deposition system. In this experiment, zinc chloride solution was used as sources, and the crystal growth was achieved at the growth temperature of 600°C and various flow rates of Nitrogen gas. The X-ray diffraction (XRD) spectrum was performed, and the photoluminescence spectra proved near-band-edge emission and strong deep-level emissions. In this work, we obtained the optimum condition for crystal growth of ZnO on m-plane sapphire, where XRD θ-2θ single peak at m-plane ZnO.

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