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Production of Iridium Metal Thin Films for Application as Electrodes in DRAMs and FRAMs
Author(s) -
Sakine Shirvaliloo
Publication year - 2015
Publication title -
journal of electrical and electronic engineering
Language(s) - English
Resource type - Journals
eISSN - 2329-1613
pISSN - 2329-1605
DOI - 10.11648/j.jeee.s.2015030201.18
Subject(s) - iridium , dram , materials science , metal , electrode , optoelectronics , metallurgy , nanotechnology , chemistry , catalysis , biochemistry
Thin films of Noble metals such as Iridium have several potential applications in ICs. Electronic devices are fabricated on the integrated circuits that include transistor, capacitor and resistance. They can be used as electrodes in DRAMs and FRAMs, and as gate electrodes in MOSFETs. Noble metals are excellent metals for electrode fabrication because chemical stability, highly electrical resistance, highly work function and many of them can withstand highly oxidizing conditions. In this paper, emphasis is on reaction mechanisms and limits, leakage currents, electrodes and electrode interfaces and deposition techniques.

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