Open AccessStudy on Ultra Shallow Junction n-MOS with 350°C Microwave Annealing for Activation of Phosphorus Dopants in Germanium
Author(s) -
Tzu-Lang Shih
Publication year - 2017
Publication title -
journal of electrical and electronic engineering
Language(s) - English
Resource type - Journals
eISSN - 2329-1613
pISSN - 2329-1605
DOI - 10.11648/j.jeee.20170501.12
Subject(s) - dopant activation , germanium , dopant , annealing (glass) , materials science , sheet resistance , optoelectronics , silicon , ion implantation , amorphous solid , analytical chemistry (journal) , doping , nanotechnology , crystallography , ion , chemistry , metallurgy , layer (electronics) , organic chemistry , chromatography
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