Open AccessAnalysis of Series-Connected IGBTs Protection Method under Short Circuit II
Author(s) -
Mei Guifang
Publication year - 2016
Publication title -
journal of electrical and electronic engineering
Language(s) - English
Resource type - Journals
eISSN - 2329-1613
pISSN - 2329-1605
DOI - 10.11648/j.jeee.20160405.18
Subject(s) - insulated gate bipolar transistor , voltage , series (stratigraphy) , bipolar junction transistor , electrical engineering , equivalent circuit , fault (geology) , short circuit ratio , capacitance , series and parallel circuits , overvoltage , control theory (sociology) , electronic engineering , short circuit , engineering , computer science , transistor , physics , led circuit , control (management) , paleontology , electrode , quantum mechanics , seismology , geology , artificial intelligence , biology
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom