Open AccessAnalytical Surface Charge Control Model for AlN/GaN/AlGaN Double Heterojunction Field-Effect Transistor
Author(s) -
Md Shofiqul Islam Khan
Publication year - 2013
Publication title -
journal of electrical and electronic engineering
Language(s) - Uncategorized
Resource type - Journals
eISSN - 2329-1613
pISSN - 2329-1605
DOI - 10.11648/j.jeee.20130105.12
Subject(s) - heterojunction , high electron mobility transistor , materials science , transistor , fermi gas , optoelectronics , voltage , charge density , fermi level , range (aeronautics) , condensed matter physics , surface (topology) , electron , physics , mathematics , geometry , quantum mechanics , composite material
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