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Comparative Study of Heterostructure Barrier Diodes in the GaAs/AlGaAs System
Author(s) -
Mise Akura
Publication year - 2018
Publication title -
international journal of materials science and applications
Language(s) - English
Resource type - Journals
eISSN - 2327-2643
pISSN - 2327-2635
DOI - 10.11648/j.ijmsa.20180704.17
Subject(s) - diode , materials science , optoelectronics , heterojunction , step recovery diode , electric field , electron , backward diode , doping , rectangular potential barrier , schottky diode , physics , quantum mechanics

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