Selection of Gate Dielectrics for ZnO Based Thin-Film Transistors | Zendy

Vaibhav Garg | Zendy; Navneet Gupta | Zendy

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Selection of Gate Dielectrics for ZnO Based Thin-Film Transistors

Author(s) -

Vaibhav Garg,

Navneet Gupta

Publication year - 2016

Publication title -

bulletin of electrical engineering and informatics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.251

H-Index - 12

ISSN - 2302-9285

DOI - 10.11591/eei.v5i2.531

Subject(s) - materials science , optoelectronics , dielectric , semiconductor , thin film transistor , silicon , transistor , engineering physics , silicon on insulator , gate dielectric , electronic engineering , nanotechnology , electrical engineering , engineering , voltage , layer (electronics)

The bulk of semiconductor technology has been based on silicon till today. But silicon has its own limitations. It is not transparent to visible light and hence it cannot be used in certain applications. ZnO is a material which is transparent to visible light. In this paper, we compare the electrical performance of ZnO Thin film Transistors using different gate insulators. Certain performance indices and material indices were considered as the selection criteria for electrical performance. A methodology known as Ashby’s approach was adopted to find out the best gate insulators and based on this methodology various charts were plotted to compare different properties of competing materials. This work concludes that Y 2 O 3 is the best insulator followed by ZrO 2 and HfO 2 .

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