Organic Semiconductor and Transistor Electrical Characteristic Based on Carbon Nanotubes
Author(s) -
Kianoosh Safari,
Ali Rafiee,
Hamidreza Dalili Oskouei
Publication year - 2016
Publication title -
bulletin of electrical engineering and informatics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 12
ISSN - 2302-9285
DOI - 10.11591/eei.v5i1.551
Subject(s) - pentacene , materials science , carbon nanotube , transistor , optoelectronics , electrode , current density , organic semiconductor , nanotechnology , semiconductor , carbon nanotube field effect transistor , current (fluid) , thin film transistor , field effect transistor , layer (electronics) , voltage , electrical engineering , chemistry , physics , engineering , quantum mechanics
We show that the performance of pentacene transistors can be significantly improved by maximizing the interfacial area at single walled carbon nanotube (SWCNT)/pentacene. The interfacial areas are varied by anchoring short SWCNTs of different densities (0-30/μm) to the Pd electrodes. The mobility average is increased three, six and nine times for low, medium and high SWCNT densities, respectively, compared to the devices with zero SWCNT. The current on-off ratio and on-current are increased up to 40 times and 20 times with increasing the SWCNT density. We explain the improved device performance using reduced barrier height of SWCNT/pentacene interface.
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