Open AccessSubstrate Current Evaluation for Lightly and Heavily Doped MOSFETs at 45 nm process Using Physical Models
Author(s) -
Sanjeev Sharma,
R. P. Yadav,
Vijay Janyani
Publication year - 2016
Publication title -
bulletin of electrical engineering and informatics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 12
ISSN - 2302-9285
DOI - 10.11591/556
Subject(s) - doping , materials science , mosfet , substrate (aquarium) , engineering physics , optoelectronics , current (fluid) , process (computing) , nanotechnology , electronic engineering , electrical engineering , computer science , engineering , transistor , voltage , oceanography , geology , operating system