In‐Plane Texturing in Sputtered Films
Author(s) -
Jay Whitacre,
S. M. Yalisove,
J. C. Bilello
Publication year - 2000
Publication title -
texture stress and microstructure
Language(s) - English
Resource type - Journals
eISSN - 1687-5400
pISSN - 1687-5397
DOI - 10.1155/tsm.34.91
Subject(s) - materials science , plane (geometry) , composite material , geometry , mathematics
Films consisting of Mo, Cr, and Ta have all been found to display well-defined biaxialtextures when grown under certain conditions. A well-defined out-of-plane texture evolveswithin the first ~ 100 nm of the film, followed by the evolution of a preferred crystallographicorientation in the plane of the film. These effect were studied using X-ray pole figureanalysis, scanning electron microscopy (SEM), transmission electron microscopy(TEM), transmission electron diffraction (TED), and high resolution grazing incidenceX-ray scattering (GIXS). It has been found that in-plane texture evolves only when thereis, on average, oblique adatom flux incident onto the substrate. Further, the type of out-of-plane texture can be controlled by altering the deposition conditions. Parameters including cathode-to-substrate distance, deposition rate, average angle of adatom incidence,and sputter gas pressure, have been shown to determine the type out-of-planetexture, as well as the rate of in-plane texture evolution. The studies conducted have shownthat it is possible to create and control biaxially textured films and multilayers made of avariety of materials. A recent model which describes this phenomena is discussed.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom