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Goss texture development in silicon steels has been studied through EBSP measurementsand various computer simulations and calculations. The results of these studies suggestthe possible role of high energy grain boundaries (HEGB) in the abnormal growth ofGoss grains. The Goss orientation has a fraction of HEGBs that is higher than any othercommonly observed orientations in the primary recrystallized silicon steels. The HEGBshave high GB diffusion coefficients which cause rapid coarsening of precipitates on theseHEGBs and release them earlier, at the time when other GBs are still pinned. A differencein the mobility between the HEGBs and the other GBs favours the abnormal growth ofGoss grains. The Monte-Carlo methods that have been developed and used to validatethis assumption have generated abnormally growing Goss grains. The experimentallyobserved grain boundary character distributions (GBCD) around the growing Gossgrains have been reproduced in simulation by assuming high mobility to HEGBs. Apartfrom the high mobility differences between different GBs, the importance of the fractionof GBs with high mobility around growing Goss grains is realized.

Goss Texture Development in Fe–Si Steels