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Reliability Evaluation of Thick Film Resistors Through Measurementof Third Harmonic Index
Author(s) -
Susumu Kasukabe,
Minoru Tanaka
Publication year - 1981
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/apec.8.167
Subject(s) - resistor , reliability (semiconductor) , index (typography) , reliability engineering , materials science , electrical engineering , computer science , engineering , physics , voltage , thermodynamics , world wide web , power (physics)
The degradation mechanism of ruthenium-based thick film resistors is investigated in accelerated tests under various conditions of humidity, temperature and overload stress. This study shows that the variation of resistance is mainly caused by hydration and dehydration in the conductive componentRuO 2 :   RuO 2 + xH 2 O ↔ RuO 2   •   xH 2 O . In addition to measuring resistance, the Third Harmonic Index (THI) is studied as the characteristic which may indicate the degree of various defects in resistors. A strong correlation exists between “the initial THI” and “the variation rate of resistance during an accelerated test”. A resistor which indicates a quite large initial THI shows remarkable variation of resistance, and has scratches and/or foreign substances on the surface of the thick film resistor. As a result, it becomes evident that the initial THI can be used to predict the stability of a resistor in a nondestructive test.

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