Properties of Nickel Films Prepared by R.F. Sputtering and Interdiffusion Analysis of Ta2N–Ni Films
Author(s) -
Syed Zain Ul Abdin,
A. M. Huber,
G. Morillot,
C. Val
Publication year - 1980
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/apec.7.159
Subject(s) - sputtering , nickel , materials science , layer (electronics) , analytical chemistry (journal) , deposition (geology) , tantalum , secondary ion mass spectrometry , etching (microfabrication) , secondary ion mass spectroscopy , metallurgy , mass spectrometry , thin film , chemistry , composite material , silicon , nanotechnology , chromatography , paleontology , sediment , biology
Ni film deposition by r.f. sputtering and etching conditions have been investigated. The contact resistance and adhesion of this Ni layer deposited directly onto Ta 2 N films have also been studied in air and at elevated temperatures. In this combination, the Ta 2 N/Ni interdiffusion analysis was carried out by the Secondary Ion Mass Spectroscopy (SIMS).
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