Electrical Properties of Epitaxial Aluminium Films | Zendy

E. Dobierzewska-Mozrzymas | Zendy; F. Warkusz | Zendy

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Electrical Properties of Epitaxial Aluminium Films

Author(s) -

E. Dobierzewska-Mozrzymas,

F. Warkusz

Publication year - 1978

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/apec.5.223

Subject(s) - specular reflection , electrical resistivity and conductivity , monocrystalline silicon , aluminium , materials science , transmission coefficient , epitaxy , grain boundary , temperature coefficient , reflection (computer programming) , condensed matter physics , composite material , optics , transmission (telecommunications) , metallurgy , silicon , microstructure , physics , electrical engineering , engineering , layer (electronics) , computer science , programming language

The resistivity of monocrystalline Al films was measured and compared with the resistivity calculated in terms of the function which takes into account both the external and the internal size effects. A comparison of the theoretical and experimental curves shows that the specular reflection coefficient ( p ) is small, while the coefficient of electron transmission through the grain boundary ( r ) increases with increasing film thickness.

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