Size and Grain-Boundary Effects in the Electrical Conductivity of Thin Monocrystalline Films | Zendy

C. R. Tellier | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Size and Grain-Boundary Effects in the Electrical Conductivity of Thin Monocrystalline Films

Author(s) -

C. R. Tellier

Publication year - 1978

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/apec.5.127

Subject(s) - monocrystalline silicon , materials science , grain boundary , electrical resistivity and conductivity , conductivity , grain size , condensed matter physics , thin film , composite material , optoelectronics , nanotechnology , electrical engineering , silicon , physics , chemistry , engineering , microstructure

By assuming that the scattering processes from other sources than grain-boundaries can be described by a single relaxation time τ ∗ and then by solving a Boltzmann equation in which grain-boundary scattering is accounted for, we have obtained an analytical expression for the thin monocrystalline film conductivity in terms of the reduced thickness k and the grain-boundary reflection coefficient r . Numerical tables are given to show the agreement of the above expression with the Mayadas-Shatzkes expression.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research