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This paper describes a new series of thick film resistors based on a ruthenium-compound semiconducting phase, dispersed in a carefully selected and compatible glassy matrix. Analysis of the electrical properties of these resistors indicates that the conducting networks present in the structure include ohmic, non-ohmic and insulating barriers.  Experimental results on the resistors are discussed in terms of resistivity and TCR vs. firing parameters. The effect of termination materials and resistor geometry, voltage coefficient of resistance, power loading and high voltage properties are also discussed.

A High Voltage, High Performance Thick Film Resistor System