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Grain Size Dependence of the Gauge Factor of Thin Metallic Films
Author(s) -
C. R. Tellier,
A. J. Tosser
Publication year - 1977
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/apec.4.9
Subject(s) - crystallite , materials science , monocrystalline silicon , condensed matter physics , transverse plane , scattering , grain boundary , grain size , metal , surface (topology) , gauge (firearms) , strain gauge , boundary (topology) , composite material , physics , optics , mathematics , metallurgy , mathematical analysis , geometry , silicon , structural engineering , microstructure , engineering
The combined effects of grain boundary, external surface and background scattering (Mayadas and Shatzkes model) are considered. Theoretical expressions of the transverse and longitudinal strain coefficient of resistance of monocrystalline and polycrystalline films are calculated. These general formulae agree with those previously proposed for infinitely thick polycrystalline films.

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