Techniques for the Examination of Thick Film Resistor Microstructures by T.E.M.
Author(s) -
D.J. Pedder
Publication year - 1977
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/apec.4.85
Subject(s) - resistor , microstructure , transmission electron microscopy , materials science , bismuth , scanning electron microscope , electron microscope , optoelectronics , optics , nanotechnology , voltage , composite material , electrical engineering , metallurgy , physics , engineering
This paper discusses the preparation techniques which can be used for the examination of thick film resistor microstructures by Transmission Electron Microscopy. The application of this technique, including High Voltage Electron Microscopy and Electron Microscope Mass Analysis, to both Ruthenium Dioxide and Bismuth Ruthenate based thick film resistors, is considered.
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