Thin Film Integrated RC‐Networks With Compensated TemperatureCoefficients of R and C

Thin film integrated RC-networks can be prepared from two non reactively sputtered TaAl films, the properties and optimum compositions of which have been found. Temperature compensation of the integrated resistors and capacitors is achieved by adjusting the temperature coefficient of capacitance. A duplex dielectric capacitor structure is used with anodically formed TaAl-oxide and a sputtered SiO 2 layer. Temperature coefficient of capacitance, dielectric loss and capacitance density have been measured vs. SiO 2 thickness. Because of almost linear dependences on temperature of both the TaAl resistors and the TaAl-oxide/SiO 2 -capacitors, such RC-networks show temperature compensation over a wide temperature range, the TCC being +110 ppm/K and the TCR −110 ppm/K.