Open AccessReactive Sputtering of NiCr Resistors With Closely AdjustableTemperature Coefficient of Resistance
Author(s) -
Jürgen Griessing
Publication year - 1977
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/apec.4.133
Subject(s) - temperature coefficient , nichrome , sputtering , resistor , atmospheric temperature range , t cell receptor , oxygen , materials science , argon , analytical chemistry (journal) , chemistry , composite material , electrical engineering , thermodynamics , thin film , nanotechnology , t cell , physics , voltage , engineering , immune system , organic chemistry , chromatography , biology , immunology
A process is described to obtain NiCr resistors with adjustable temperature coefficient of resistance (TCR) by reactive sputtering in an Ar-atmosphere with a small amount of oxygen in the range of 2% to 6%. As deposited the films show a TCR < −200 ppm/K. By heat treatment in air at a temperature of 350°C the TCR can be raised to values above −20 ppm/K. The time of heat treatment necessary to obtain a given TCR depends on the oxygen/argon ratio during sputtering. The long term stability is not affected by the choice of this ratio in a wide range. Resistor networks with a solderable conductor pattern of TiPdAu have a TCR of 0±7 ppm/K and a long term resistance drift ≤ 2‰ in the first 1,000 hours at 125°C.
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