Resistivity Recovery of Thin Sputtered Aluminium Films | Zendy

C. R. Tellier | Zendy; A. J. Tosser | Zendy

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Resistivity Recovery of Thin Sputtered Aluminium Films

Author(s) -

C. R. Tellier,

A. J. Tosser

Publication year - 1976

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/apec.3.85

Subject(s) - electrical resistivity and conductivity , annealing (glass) , materials science , aluminium , activation energy , isothermal process , grain boundary , composite material , grain size , crystallite , thin film , metallurgy , temperature coefficient , mineralogy , chemistry , thermodynamics , microstructure , nanotechnology , electrical engineering , physics , organic chemistry , engineering

Aluminium films were r.f. sputtered onto vycor slides. Annealing induces a decrease of resistivity at temperatures between 300 K and 414 K. Isothermal resistance recovery occurs with a constant rate depending on the annealing temperature; the activation energy increases from 0.3 eV to 0.4 eV for increasing thickness. The resistivity recovery is attributed to a surface reordering phenomenon, which is in good agreement with the Mayadas–Shatzkes conduction occuring in these polycrystalline films, with a thickness independent mean grain diameter. Reflections on grain boundaries are independent of ageing, whereas the reflection coefficient on the upper surface is increased.

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