n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices | Zendy

Hikmat S. Hilal | Zendy; Muayad Masoud | Zendy; Samar Shakhshir | Zendy; Najeh Jisraw | Zendy

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n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices

Author(s) -

Hikmat S. Hilal,

Muayad Masoud,

Samar Shakhshir,

Najeh Jisraw

Publication year - 2001

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/apec.26.11

Subject(s) - enhanced data rates for gsm evolution , surface modification , materials science , chemistry , optoelectronics , chemical engineering , polymer chemistry , computer science , engineering , telecommunications

Tetra(-4-pyridyl)porphyrinatomanganese(III)sulfate, MnP, (in the forms of MnIII and MnII mixture), was embedded into a polysiloxane polymer matrix and attached to the surfaces of n-GaAs wafers. The n-GaAs/polymer/MnPsystem was annealed under nitrogen and used for photoelectrochemical study in water/LiCIO4/Fe(CN)63-/Fe(CN)64− system. The results indicated a positive shift in the value of the flat-band potential of the semiconductor due to MnP. This was manifested by shifting the values of the dark-current onset potential and the photo-current open-circuit potential towards more positive values. These findings are potentially valuable in future applications of solar energy in hydrogen and oxygen production from water

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