The Potential of Reactively RF Sputtered ZnO Thin Films for the Fabricationof Microwave Filters | Zendy

Aristotelis Kollias | Zendy; E. D. Tsamis | Zendy; J.N. Avaritsiotis | Zendy

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The Potential of Reactively RF Sputtered ZnO Thin Films for the Fabricationof Microwave Filters

Author(s) -

Aristotelis Kollias,

E. D. Tsamis,

J.N. Avaritsiotis

Publication year - 2000

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/apec.23.75

Subject(s) - materials science , silicon , microwave , piezoelectricity , thin film , deposition (geology) , optoelectronics , reflector (photography) , aluminium , sputtering , composite material , optics , nanotechnology , computer science , telecommunications , paleontology , light source , physics , sediment , biology

The piezoelectric properties of reactively sputtered ZnO thin films deposited on glass andsilicon substrates were studied in order to assess their potential for the construction ofRF overmoded filters. Films of high crystallographic orientation {002}, as shown byXRD measurements and SEM observations, and high value of keff2, calculated with the aid of the BVD model, were obtained after the optimization of the deposition conditions, with highly repetitive properties. Simple devices were designed and constructed onsilicon substrates which showed a quality factor of 1000 without the use of a Braggacoustic reflector, and a temperature drift of –30ppm/℃

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