Modeling of Surface Potential and Threshold Voltage of LDD nMOSFET′s with Localized Defects | Zendy

A. Bouhdada | Zendy; R. Marrakh | Zendy

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Modeling of Surface Potential and Threshold Voltage of LDD nMOSFET′s with Localized Defects

Author(s) -

A. Bouhdada,

R. Marrakh

Publication year - 2000

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/apec.23.61

Subject(s) - mosfet , threshold voltage , optoelectronics , surface (topology) , materials science , voltage , electrical engineering , engineering physics , engineering , transistor , mathematics , geometry

We propose a model of the surface potential and the threshold voltage for submicronlightly-doped drain LDD nMOSFET’s in relation with the localized defects at theinterface Si–SiO2 in the overlap n‾ LDD region. Calculating the surface potential in theintrinsic and the LDD regions by solving the 2-D Poisson's equation, the minimumsurface potential and the threshold voltage model are derived. Simulation results showthat the extension of the degraded zone induce a decrease of the surface potential and amodification on its profile, this leads to an increase of the threshold voltage. Thethreshold voltage variation can be used to characterize the ageing effect. The DIBL(Drain induced barrier lowering) and the substrate bias effects are also included in thismodel

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