VDMOSFET Model Parameter Extraction Based on Electrical and Optical Measurements

Lateral Device parameters for VDMOSFET (Vertical double diffused metal oxidesemiconductor field effect transistor) with hexagonal cells has been extracted by anoriginal model based on electrical and optical measurements. Using microscopicobservation for the ship of the device and by C-V characterization, the lateral devicestructure parameters could be extracted. Values of the extracted parameters are in goodcorrelation with the values given by the manufactured. Advantage of this model the highprecision results with a low cost. Perhaps, the most important point in this model, thatwe can replace the other techniques usually employed in this study where we destroyedthe device for cut and cross section of the structure. The proposed technique in this papercan be very useful for analyzing any complex geometrical structure of VDMOStransistors (hexagonal, triangular, square etc...)