Extraction of RDS(ON) of n‐Channel Power MOSFET by Numerical Simulation Model | Zendy

Chafic Salame | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Extraction of R_DS(ON) of n‐Channel Power MOSFET by Numerical Simulation Model

Author(s) -

Chafic Salame

Publication year - 2000

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/apec.23.175

Subject(s) - mosfet , extraction (chemistry) , transistor , power mosfet , materials science , channel (broadcasting) , power (physics) , numerical analysis , electronic engineering , electrical engineering , optoelectronics , analytical chemistry (journal) , computational physics , mathematics , physics , engineering , voltage , chemistry , mathematical analysis , thermodynamics , chromatography

In this paper we present an original method for n-channel power MOSFET resistanceextraction in the operation mode (RDS(ON)). The IDS=f(VDS) electrical characteristics measurements for the transistor and the Body-Drain junction are realized for the experimental determination and the extraction (by numerical analysis) of RDS(ON), respectively. Values of this resistance are extracted for different positive bias applied between the gate and the source (+VGS). Physicals parameters obtained from the numerical analysis are inspected, and results shows that the numerically analysed junction characteristic is in very good correlation with the electrical measuremen

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research