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The Direct Bonding of Metals to Ceramics and Application in Electronics
Author(s) -
James Burgess,
C. A. Neugebauer,
George Flanagan,
Robert E. Moore
Publication year - 1975
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/apec.2.233
Subject(s) - materials science , eutectic system , ceramic , direct bonding , eutectic bonding , oxidizing agent , copper , metallurgy , metallic bonding , melting point , metal , anodic bonding , foil method , composite material , alloy , chemistry , silicon , organic chemistry
The direct bonding of metals to ceramics is possible utilizing a gas metal eutectic. The mechanism of direct bonding of copper foil to ceramics in a slightly oxidizing atmosphere is presented. It involves the formation of eutectic melt between copper and oxygen at a temperature slightly below the melting point of copper, which serves to bring the foil into intimate contact with the substrate. Metals to which technique is applicable include Cu, Fe, Ni, Co, Ag, Cr, Mo and Al. A brief review of other metal–ceramic bonding techniques is given for comparison.

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