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Variations of resistance of evaporated or sputtered films during deposition have been studied for deposition times lower than five minutes and for resistances higher than 100 [2 sq -1 As our main objective is to study the conduction mechanisms in sputtered films over the thickness range from 200 to 1500 A, (i.e. in the 10 to 100 2 sq -1 sheet resistance range), we report in this note our investigations about the electrical resistance R(T) of zinc films for deposition time, T greater than two minutes and for four average deposition rates. Preparation of films has been described in a previous paper; they are deposited by d.c. diode sputtering of a zinc target (99.9% purity) in an atmosphere of U grade argon. As broken sputtering is equivalent to continuous deposition4, sputtering was stopped every minute to measure the resistance R with a multimeter. The average sputtering rate was determined from the deposition time and the film thickness measured by an optical method; this method is adequate for we have observed very slight anisotropic effects, 6 which seem more important for higher sputtering rates; it varied with the intensity Ie of the glow discharge current, the voltage Ue remaining constant (curves 1, 2, 3 on Figure 2). Variations of the deposition rate as a function of the intensity Ie of glow discharge current for a voltage equal to 1500 V are shown in Figure 1. This curve is in good agreement with the results of Laville Saint-Martin who established that sputtering rate v is given by

Variations of Thin Metallic Zinc Film Resistances With Sputtering Rate