Solid State Metal‐Ceramic Reaction Bonding Applications to Transistor Packages and Advanced Materials

With the rapid development in the semiconductor industry, solid state devices are now being produced which are capable of generating high power and operating at elevated temperatures. Package design, in particular thermal properties, is playing a key role in furthering this development. With this in mind, a ceramic package, suitable for highpower transistor devices, has been developed using solid state reaction bonding of BeO to Cu. Reaction bonding is a direct solid state process involving no intermediate layers and is suitable for joining a wide range of metals (e.g. Pt, Au, Cu, Ni, Co) to various ceramics (e.g. A1203, BeO, ZrO2, MgO, LaCrO3). The process was developed following observations of De Bruin, Moodie and Warble. a’’3 with patents being held in several countries